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???????????????????? ???????????????? ???????????????????????????? ?? ???????????? ?????????????????? ???????????????????? ?? GaN

Authors
Publisher
???????????????????????? ?????????????????????? "?????????????????? ??????????????????????"
Publication Date
Keywords
  • ?????????? ????????????????
  • ?????????????????? ???????????? ????????????
  • ???????????? ??????????
  • Transport Phenomena
  • Charge Carrier Scattering
  • Gallium Nitride
  • ?????????????? ????????????????
  • ?????????????????? ?????????????????? ????????????
Disciplines
  • Musicology
  • Physics

Abstract

???????????????????? ?????????????? ?????????????????? ???????????????????? ???? ???????????????????????????? ????????????????????, ?????????????????????? ???????????????????? ?? ?????????????????? ???? ?????????????????????? ?????????????????? ????????????????, ??'?????????????????????????????? ???? ?????????????????????? ????????????????, ?????????? ?????????????????? ????????????????????, ???????????????????????? ???? ???????????????????????? ?????????????????? ?? ?????????????? GaN ???? ???????????????????? ???????????????? ???? ?? ?????????????????????????? ?????????????? 4*10(6)????(-3) ???? 2*10(19)????(-3). ?????????????????????? ???????????????????????? ???????????????????? ???????????????????? ???????????????????? ?? ?????????????????? 40 - 500K. The processes of the electron scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, neutral and ionized impurities in wurtzite GaN samples with impurity concentration 4*10(6)????(-3) and 2*10(19)????(-3) are considered. The temperature dependences of the electron mobility in temperature range 40 - 500K are calculated.

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