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Band gap modulation of ZnCdO alloy thin films with different Cd contents grown by pulsed laser deposition

Authors
Journal
Journal of Alloys and Compounds
0925-8388
Publisher
Elsevier
Publication Date
Volume
547
Identifiers
DOI: 10.1016/j.jallcom.2012.08.070
Keywords
  • Zncdo Thin Film
  • Band Gap Engineering
  • Photoluminescence
  • Pulsed Laser Deposition

Abstract

Abstract ZnCdO thin films with different Cd contents have been deposited on quartz substrate by pulsed laser deposition. All the obtained films have a hexagonal wurtzite ZnO structure with a highly c-axis orientation without any Cd related phases from the XRD patterns. The band gap energy of ZnCdO films extending to 2.88eV can be achieved by incorporating 9.6% Cd content. The bound excitons emission at 2.925eV in the ZnCdO thin film can be found in the low temperature photoluminescence measurement.

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