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Photoluminescence and its time evolution of AlN thin films

Authors
Journal
Physics Letters A
0375-9601
Publisher
Elsevier
Publication Date
Volume
280
Identifiers
DOI: 10.1016/s0375-9601(01)00087-1
Keywords
  • Photoluminescence
  • Nitrides
  • Semiconducting Films
Disciplines
  • Physics

Abstract

Abstract We report the room temperature photoluminescence measurements of AlN thin films stimulated by above-band-gap pulsed light excitation. Two AlN thin films with different composition and structure were studied. One AlN film, prepared by pulsed laser deposition from sintered aluminum nitride ceramic target, contains oxide impurities. The other one, prepared by plasma assisted reactive pulsed laser deposition from pure aluminum metal target, is composed of pure AlN compound. Upon the irradiation of the samples by 193 nm excimer laser pulses, both the as-grown AlN thin films luminesce in the ultraviolet and the green regions, peaked at 440 and 400 nm, respectively. We also examined the time evolution of the luminescence and found that the entire broad luminescence band decays non-exponentially at approximately the same rate.

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