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Formation of p on n photodiodes in Hg1− xCdxTe by ion implantation and cw CO2laser annealing

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
72
Identifiers
DOI: 10.1016/0022-0248(85)90193-9
Disciplines
  • Physics

Abstract

Abstract Rapid thermal annealing of phosphorus implanted n-type Hg 1- x Cd x Te ( x = 0.29) has yielded p on n photodiodes sensitive to radiation in the infrared (3.5-5 μm). Radiation damage annealing was achieved by heating the sample for fractions of seconds ( ∼ 380°C for ∼ 0.1 s) by photons from a cw CO 2 laser.

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