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The optical properties of GeO2, ZnS and Ge films produced by rf sputtering

Authors
Journal
Vacuum
0042-207X
Publisher
Elsevier
Publication Date
Volume
41
Identifiers
DOI: 10.1016/0042-207x(90)93992-r

Abstract

Abstract Thin films of GeO 2, ZnS and Ge were deposited using rf magnetron sputtering with film thickness varying in broad range of values. After annealing, X-ray spectra reveal recrystallization of the GGeO 2 films. The transmission measurements were conducted to determine the absorption coefficient α and the optical indices n and k. Tauc's plots were constructed to determine the optical gap for the GeO 2 films. The values determined for the optical constants are in agreement with the results found in the literature.

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