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Electron-electron interactions in the surface inversion layer of a semiconductor

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
16
Issue
12
Identifiers
DOI: 10.1016/0038-1098(75)90835-2
Disciplines
  • Physics

Abstract

Abstract The effective unscreened interaction between a pair of electrons in the inversion layer of an MIS structure is estimated by using classical electrostatics together with a knowledge of the quantum mechanical wave function of the inversion layer electrons. The change in the effective mass m ∗ and effective g-value g ∗ are evaluated in the random phase approximation.

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