Affordable Access

Publisher Website

Infrared spectroscopy of self-organized InAs nanostructures grown on InAlAs/InP(0 0 1) for infrared photodetection applications

Authors
Journal
Infrared Physics & Technology
1350-4495
Publisher
Elsevier
Publication Date
Volume
42
Identifiers
DOI: 10.1016/s1350-4495(01)00104-9
Keywords
  • Iii–V Semiconductors
  • Quantum Wires
  • Quantum Dots
  • Intraband Transitions
  • Femtosecond Spectroscopy
Disciplines
  • Physics

Abstract

Abstract InAs nanostructures on InAlAs/InP(0 0 1) have been fabricated using Stranski–Krastanov growth mode. Depending on growth conditions, a full coverage of the InAlAs surface by either InAs quantum wires or quantum dots can be achieved. Giant intraband absorptions are observed at mid-infrared wavelengths. The intraband resonances are strongly polarized in the layer plane as a consequence of the quantum confinement along the [1 1 0] direction. The absorption at normal incidence reaches 26% for 10 layers of n-doped (1×10 12 cm −2) InAs elongated dots. We also report on femtosecond pump–probe experiments aimed at measuring the electron capture time. Typical times range from 3 ps for broad wires to 6 ps for narrow wires.

There are no comments yet on this publication. Be the first to share your thoughts.