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Chemical lowering of the interface Fermi level of n and p types GaAs/Al Schottky diodes

Authors
Journal
Materials Science and Engineering B
0921-5107
Publisher
Elsevier
Publication Date
Volume
90
Identifiers
DOI: 10.1016/s0921-5107(01)00935-7
Keywords
  • Al/Gaas Structures
  • Schottky Barrier Heights
  • Fermi Level

Abstract

Abstract Modification of the surface of GaAs by Ru 3+ adsorption leads to a change in Schottky barrier heights of Al/GaAs junctions for both n- and p-type. From our measurements, we have inferred that the surface Fermi level, when compared to the commonly measured pinning position in Al/GaAs structures, is shifted by about 0.1 eV towards the valence band edge.

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