Affordable Access

Publisher Website

Silane oxidation study: Analysis of data for SiO2films deposited by low temperature chemical vapour deposition

Authors
Journal
Thin Solid Films
0040-6090
Publisher
Elsevier
Publication Date
Volume
117
Issue
3
Identifiers
DOI: 10.1016/0040-6090(84)90288-8
Disciplines
  • Chemistry

Abstract

Abstract The purpose of this paper is to determine the rate constant k r of the reaction and the equilibrium constants of oxygen ( K o2) and silane ( K SiH 4) adsorption on the surface in the low temperature chemical vapour deposition (CVD) of SiO 2 films from the fit of the experimental dependence of the deposition rate on the CVD conditions to the theory of bimolecular surface reactions. The results obtained are discussed in terms of (i) an exponential temperature dependence of k r with an activation energy of 7.7 kcal mol -1 and (ii) a temperature dependence of K 02 and K SiH4 which involves a transition in the adsorption process of the reactant species from physical adsorption to chemisorption as the temperature is increased over 200 °C.

There are no comments yet on this publication. Be the first to share your thoughts.