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Thickness dependent structure of β-FeSi2grown on silicon by solid phase epitaxy

Authors
Journal
Journal of Alloys and Compounds
0925-8388
Publisher
Elsevier
Publication Date
Volume
393
Identifiers
DOI: 10.1016/j.jallcom.2004.10.005
Keywords
  • Solid Phase Epitaxy
  • β-Fesi2
  • Nanodots
  • Polycrystalline Layer
Disciplines
  • Physics

Abstract

Abstract Semiconducting β-FeSi 2 was grown on Si(0 0 1) substrates by depositing Fe layers of thickness 2, 4 and 6 nm at room temperature in an ultra-high vacuum system and subsequent in situ annealing at 600 °C for 15 min. The phase of the grown polycrystalline β-FeSi 2 was confirmed by electron diffraction and infrared reflectance measurements. Transmission electron microscopy analysis has shown that the structure of the formed β-FeSi 2 is thickness dependent. For an Fe layer of thickness 2 nm, β-FeSi 2 nanodots with a mean diameter of about 15 nm were grown, together with islands of irregular shape and linear or S-type arrays of β-FeSi 2 nanodots. For thicker Fe layers, the grown β-FeSi 2 consisted of continuous polycrystalline layers.

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