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On the Application of XPS, SSIMS and QCM to Study the Surface of a CF4/O2Plasma Treated Polycarbonate

DOI: 10.1016/b978-0-444-87301-9.50041-6


XPS, SSIMS, water contact angle and etch rate measurements have been used to characterize the effect of CF4/O2 discharges on bisphenol-A-polycarbonate (PC). 1% O2 discharges resulted in the grafting of fluorocarbon radicals to the polymer surface. At higher O2 percentage in the gas feed fluorine atoms reacted with the polymer surface inducing degradation of the aromatic rings and etching. Oxidation of the PC surface was observed after all the treatments. Due to considerations based on reactivity and relative concentration in the discharge, oxygen molecules are considered more effective than oxygen atoms in inducing oxidation. Etching was found to occur as well; fluorine atoms and oxygen molecules are considered most important in promoting it.

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