Abstract We fabricated a CuScO 2 thin film on an α-Al 2O 3 (1 1 2 ̄ 0) substrate by the pulsed laser deposition method using a single-phase Cu 2Sc 2O 5 target, and investigated the effect of oxygen pressure on the film quality. Under optimized oxygen pressure, we obtained a single-phase CuScO 2 thin film whose crystalline structure was the rhombohedral system. The film showed a strong c-axis orientation. The optical transmittance of the film was greater than 70% in the visible/near-infrared region, while the energy gap for direct allowed transition was estimated to be 3.7 eV. The resistivity (ρ) was 8.6×10 3 Ω cm at room temperature, and log ρ was proportional to T −1/4 below 250 K. This suggests that a variable-range hopping mechanism is dominant below 250 K.