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Comparison of thermal reactions of phosphine on Ge(1 0 0) and Si(1 0 0) by high-resolution core-level photoemission

Surface Science
Publication Date
DOI: 10.1016/s0039-6028(01)00783-x
  • Phosphine
  • Photoemission (Total Yield)
  • Chemical Vapor Deposition
  • Silicon
  • Germanium


Abstract The thermal decomposition processes of phosphine (PH 3) on a Ge(1 0 0)-2×1 surface at temperatures between 325 and 790 K were investigated and compared with those on Si(1 0 0)-2×1. High-resolution synchrotron radiation core-level photoemission spectra indicates that, at room temperature phosphine molecularly adsorbs on the Ge(1 0 0)-2×1 surface, however on the Si(1 0 0)-2×1 it partially dissociates into PH 2 and H. Successive annealing of the PH 3-saturated Si(1 0 0) and Ge(1 0 0) surfaces at higher temperatures similarly converts PH 3 into PH 2 and PH 2 to P. P atoms form stable P–P and/or P–Si dimers on Si(1 0 0) above 720 K, but exhibit complex bonding configurations on Ge(1 0 0).

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