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Sol-gel TiO2films on silicon substrates

Authors
Journal
Thin Solid Films
0040-6090
Publisher
Elsevier
Publication Date
Volume
207
Identifiers
DOI: 10.1016/0040-6090(92)90120-z

Abstract

Abstract Titanium dioxide (TiO 2) thin films have been prepared on silicon substrates by the sol-gel method. The properties of the resultant films are process dependent. The effects of solution content (type of titanium alkoxide, type of solvent, equivalent oxide concentration, [H 2O]/[Ti(OR) 4] ratio), gas moisture during deposition and heat treatment temperature on the film properties are discussed. The X-ray diffraction spectra, optical and electrical properties and TiO 2Si interface quality have been studied.

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