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Growth of InSb1-xBixsingle crystals by Czochralski method

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
12
Issue
2
Identifiers
DOI: 10.1016/0022-0248(72)90047-4

Abstract

Abstract Because of the semi-metallic character of InBi, one can hope to reduce the InSb gap when introducing Bi into Sb sites. The InSb 1- x Bi x compounds seem suitable for utilisation in the middle infra-red detection field. A method of preparing InSb 1- x Bi x single crystals is described. The technique consists in pulling crystals by the Czochralski method. The melt is made in a graphite crucible heated in an electric resistance furnace and flushed with hydrogenized argon. The study deals with the realization of solid solutions of InSb 1− x Bi x up to x = 0.026.DTAtechnique indicates the existence of a solid solution up to x corresponding to the same value. Lattice parameter variation of InSb depending on x is observed.

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