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Immiscible growth of In1−xGaxP in low-vacuum MOVPE

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Volume
93
Identifiers
DOI: 10.1016/0022-0248(88)90524-6
Disciplines
  • Physics

Abstract

Abstract A new type of immiscible growth of In1−xGaxP on GaAs was observed in low-vacuum (0.03 Torr) MOVPE. From the compositional separation observed as two separated peaks of (200) in an X-ray diffraction pattern, the surface morphology of the immiscible In1−xGaxP layer, and an analysis for the distribution of In and Ga by EPMA, it was found that InP-rich crystallites were formed in a GaP-rich flat layer. To explain the immiscible growth of In1−xGaxP in low-vacuum MOVPE, a growth model was constructed based on a modification of a thermodynamic explanation of immiscibility. By this model, three types of the crystal growth (immiscible In1−xGaxP, normal In1−xGaxP and InP growth on GaAs) were explained, consistently with surface morpologies.

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