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Direct observation of the growth process of silicon carbide nanowhiskers by vapor–solid process

Authors
Publisher
Elsevier B.V.
Publication Date
Volume
39
Issue
1
Identifiers
DOI: 10.1016/j.physe.2007.03.005
Keywords
  • Sic Nanowhiskers
  • Vapor–Solid Mechanism
  • Electron Microscopy

Abstract

Abstract Silicon carbide (3C–SiC) nanowhiskers were synthesized in a special vapor–solid process. In this process, silicon powder and carbon black were used as reactants, but they were separated by a thin and holed alumina plate so that the formation of SiC nanowhiskers is attributed to the reaction of gaseous silicon with carbon black particles. X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were employed to characterize the product. Based on the characterizations, a formation mechanism of SiC nanowhiskers is proposed.

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