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A method for low-concentration phosphorus diffusion by ambient control

Authors
Journal
Solid-State Electronics
0038-1101
Publisher
Elsevier
Publication Date
Volume
29
Issue
9
Identifiers
DOI: 10.1016/0038-1101(86)90015-8

Abstract

Abstract A method of surface concentration control for phosphorus diffusion by manipulating the growth rate of phosphosilicate glass is described. It is pointed out that the surface concentration in the oxidising ambient can be varied over a wide range by changing (i) the ratio of partial pressures of oxygen and dopant, and (ii) the diffusion temperature. Experimental results for phosphorus diffusion in oxidising ambient using PH 3 source at various diffusion temperatures are presented.

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