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Thermal conductivity ofγ-irradiated lif at low temperatures

Authors
Journal
Journal of Physics and Chemistry of Solids
0022-3697
Publisher
Elsevier
Publication Date
Volume
36
Issue
12
Identifiers
DOI: 10.1016/0022-3697(75)90216-4

Abstract

Abstract The thermal conductivity of LiF single crystals which where γ-irradiated in a Co 60 -source at room temperature with doses ranging from 8.5 10 5 Rad to 3.6 10 8 Rad was measured in the temperature range from 60 mK to 100 K. The most heavily irradiated specimen was also measured after annealing treatments at temperatures between 260°C and 400°C. From a numerical analysis of the thermal conductivity data we derive the following interpretation of the thermal resistivity due to the radiation damage. The defects created are threefold: (a) F-centers which act as point defects, (b) small aggregates of point defects with a diameter of about 10 Å which are roughly thirty times less numerous than the F-centers (c) large scale aggregates containing several thousands of lattice sites which appear at irradiation doses ⪆10 7 Rad. Each of these defects acts on the thermal conductivity in a different temperature range and are identified as interstitial clusters through their characteristic behaviour during irradiation and subsequent annealing.

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