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Nb-doped CaTiO3transparent semiconductor thin films

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
245
Identifiers
DOI: 10.1016/s0022-0248(02)01646-9
Keywords
  • A1. Characterization
  • A3. Laser Epitaxy
  • B1. Oxides
  • B2. Semiconducting Materials

Abstract

Abstract Optically transparent Nd-doped CaTiO 3 thin films with a transmittance higher than 60% in the visible region have been epitaxially grown on LaAlO 3(0 0 1) substrates by pulsed laser deposition. The films behave as an n-type semiconductor between 50 and 300 K. The carrier concentration and mobility of the film at room temperature are about 4.195×10 19 cm −3 and 5.65 cm 2/V s, respectively. The root-mean-square surface roughness of the deposited film was measured to be 0.48 nm by atomic force microscopy. The conductive mechanism of CaTi 0.9Nb 0.1O 3 films was discussed. The results show the large potential of this material in multilayer devices.

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