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Germanium ... The Semiconductor of Tomorrow?

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Keywords
  • Germanium
  • Cmos
  • Ion Implantation
  • Semiconductor Defects
  • Dopant Activation

Abstract

Germanium is being investigated as an alternative channel material for mainstream CMOS. Although aspects of processing technology have similarities to silicon, ion implantation, and particularly the activation of dopants and removal of implant damage appear to be fundamentally different. In this paper we review some of the issues and presentresults that are encouraging in the context of PMOS devices.

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