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The thermo-optical properties of the thermal electrons induced in the SiN absorption band of a silicon nitrade layer

Surface Technology
Publication Date
DOI: 10.1016/0376-4583(84)90018-9
  • Chemistry


Abstract An analysis of the thermo-optical effects induced in the IR absorption spectrum of an Si x N y H z layer produced by plasma-enhanced chemical vapour deposition revealed the following effects. The absorption coefficient and the refractive index of the SiN bond at 790 cm -1 are more sensitive to temperature changes than are those of the NH and SiH bonds at 3650 cm -1 and 3050–3100 cm -1 respectively. The refractive index of the SiN bond can be expressed as n( t, p) = A( t) p 2 − B( t) p + c( t) where p = y/ x is less than 1.52. Quantitative analysis of the temperature-dependent fine vibrational states and the force constants of the two types of fine band oscillator revealed that the eight types of tightly bound fine oscillators in the range 1050 - 790 cm -1 and the six types of loosely bound fine oscillators in the range 790 - 700 cm -1 had different properties. They can be assigned to the double- and triple-bond Si=N and Si≡N oscillators and to the single-bond Si-N oscillators respectively. This assignment was confirmed by consideration of the statistical probability of formation of these three types of bonds by the valence electrons in the silicon and nitrogen atoms. In addition, the temperature-dependent fine structure of the very fine bands separated by 1–2 meV which were superimposed on each fine vibrational band verified that this structure has a sensitive thermo-optical property. The mean energy separation (in electronvolts) was found to be ΔE j = 4.12 × 10 -8t 2 + 4.02 × 10 -6t − 2.50 × 10 -4

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