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Effect of mosaic structure on mobilities in p-GAN films and superlattices as revealed by multifractal analysis of atomic force microscope images of the surface

Authors
Journal
Solid-State Electronics
0038-1101
Publisher
Elsevier
Publication Date
Volume
47
Issue
6
Identifiers
DOI: 10.1016/s0038-1101(02)00469-0

Abstract

Abstract For a set of p-GaN films and p-AlGaN/GaN modulation doped superlattices hole mobilities were measured together with atomic force microscope (AFM) imaging of the surface. It is shown that the apparent mobilities are strongly affected by the parameters of the mosaic structure of the films. Multifractal analysis (MFA) of the AFM images is shown to be a very useful instrument for quantitative comparison of various mosaic structures and for identifying the structures with low mobilities. A good correlation between such MFA parameters as the Renyi dimension and the order index degree and the measured mobilities is reported.

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