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Semiconductivity and band gap of Tin-Doped indium tellurate

Authors
Journal
Materials Research Bulletin
0025-5408
Publisher
Elsevier
Publication Date
Volume
27
Issue
6
Identifiers
DOI: 10.1016/0025-5408(92)90076-c
Disciplines
  • Chemistry

Abstract

Abstract Tin doped In 2TeO 6 is prepared at 700° C as a n-type semiconductor. Its carrier mobility is less than 10 −3 cm 2/Vs. From photo-electrochemical experiments the optical transition across the band gap is determined to be direct forbidden at 1.56 eV. A further indirect allowed transition occurs at 2.93 eV. The electron affinity of In 2TeO 6 is 4.5 eV.

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