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On photooxidation of Ge in obliquely deposited Ge and Ge25X75(X = S, Se, Te) thin films

Authors
Publisher
Elsevier Science
Publication Date
Keywords
  • Materials Research Centre
  • Solid State & Structural Chemistry Unit
Disciplines
  • Physics

Abstract

It has been established by photoemission studies that Ge in obliquely deposited pure Ge and Ge-chalcogenide thin films undergoes predominant photooxidation when irradiated with band gap photons. The role of Ge appears to be that of providing a highly porous low density microstructure and photooxidation seems to be a direct consequence of such large scale porosity in these films. The formation of low vapour pressure oxide fractions of Ge and Te and volatile high vapour pressure oxide fractions of S and Se is responsible for anomalous photoinduced transformations in these films.

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