Spatial resolution and charge collection in double sided silicon microstrip detectors have been measured in a 100 GeV negative pion beam, at the CERN SPS. The detectors were prototypes, designed for use in the upgrade of the Microvertex detector of the DELPHI experiment. They had integrated coupling capacitors and polysilicon resistors and a second metal layer on the n-side in order to route the signals at the end of the detectors. They have been manufactured with the use of different techniques to insulate the strips on the ohmic side (field plates and p stops) . Their performance and the dependence of their spatial resolution on the signal to noise ratio, readout pitch and particle incidence angle are presented.