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Atomic structure of monolayer AlAs islands on GaAs and its anisotropy revealed by mobility study in island-inserted quantum wells

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Volume
267
Identifiers
DOI: 10.1016/0039-6028(92)91117-t
Disciplines
  • Physics

Abstract

Abstract We have studied the lateral structure of one-monolayer thick AlAs islands deposited on the flat GaAs(001) surface by studying the mobility μ of two-dimensional (2D) electrons in novel modulation doped quantum wells in which one-monolayer thick AlAs islands are randomly inserted in the central part of the MBE grown GaAs/AlAs well. It is found that μ of 2D electrons in such island-inserted quantum wells is greatly reduced (by a factor of 5 ∼ 10) by the introduction of AlAs islands. In addition, μ measured along the (110) direction is found to be about half of μ along the ( 1 10) direction, indicating that the AlAs islands have anisotropic structures. By analyzing the mobility data, the correlation lengths of the AlAs islands are estimated to be 140 and 90 Å along the ( 1 10) and (110) directions, respectively.

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