Affordable Access

Publisher Website

Aluminum/nickel silicide contacts on silicon

Authors
Journal
Thin Solid Films
0040-6090
Publisher
Elsevier
Publication Date
Volume
53
Issue
2
Identifiers
DOI: 10.1016/0040-6090(78)90026-3

Abstract

Abstract The results of a study of the interaction occurring at elevated temperatures between nickel silicide contacts on n-type 〈111〉 silicon and a thin aluminum overlayer are presented. The electrical and structural characteristics of the Al-nickel silicide interaction were investigated using Schottky barrier diodes, Auger electron spectroscopy, X-ray diffraction and scanning electron microscopy. As-grown diodes were found to consist mainly of NiSi and the NiSi-Si interface exhibited a Schottky barrier energy φ Bn of 0.62 eV. Upon heat treatment the NiSi layer was transformed to the intermetallic NiAl 3, and the barrier energy for the resulting NiAl 3-Si interface was found to be 0.76 eV. The electrical characteristics of the NiAl 3 layer were stable up to 500°C and no evidence of aluminum penetration into the silicon substrate was found.

There are no comments yet on this publication. Be the first to share your thoughts.

Statistics

Seen <100 times
0 Comments

More articles like this

Tailoring of nickel silicide contacts on silicon c...

on Applied Surface Science Jan 01, 2007

The properties of aluminum, platinum silicide and...

on Microelectronics Journal Jan 01, 2006

Structural and electrical characterisation of tita...

on Microelectronic Engineering Jan 01, 2002
More articles like this..