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Capacitance-voltage measurements on MOS capacitors fabricated on polycrystalline silicon wafers

Authors
Journal
Applied Surface Science
0169-4332
Publisher
Elsevier
Publication Date
Volume
59
Issue
2
Identifiers
DOI: 10.1016/0169-4332(92)90294-8

Abstract

Abstract Metal-oxide-semiconductor (MOS) capacitors Fabricated on mold cast polycrystalline silicon wafers exhibit a large stretch-out and distortion both in the capacitance-voltage as well as in the inversion capacitance-frequency characteristics. This is attributed to the high density of interface traps, which can respond to gate signals over a wide range of frequencies. The frequency behaviour of the inversion capacitance over the temperature range 30–200°C demonstrates the generation-recombination, and diffusion mechanisms of the minority carrier response to an AC gate signal. The dominance of one mechanism over the other can be characterised by a transition frequency. Arrhenius plots of the transition frequency reveal three activation energies: 1.09, 0.59 and 0.16 eV. The first two energies are attributed to the generation-recombination and diffusion mechanisms, whereas the third energy remains unidentified. A high transition temperature of 170°C is observed, which is in agreement with the high density of bulk generation-recombination centres present in the polycrystalline material.

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