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Thermoelectric properties of Ru- or Ge-doped β-FeSi2films prepared by electron beam deposition

Authors
Journal
Thin Solid Films
0040-6090
Publisher
Elsevier
Publication Date
Volume
381
Issue
2
Identifiers
DOI: 10.1016/s0040-6090(00)01759-4
Keywords
  • β-Fesi2
  • Film
  • Electron Beam Deposition
  • Morphology
  • Thermoelectric Property
  • Electric Conductivity
  • Ru-Doping
  • Carrier Mobility

Abstract

Abstract Direct preparation of non-doped, and Ru- or Ge-doped β-FeSi 2 films from the gaseous phase have been studied using a ternary simultaneous electron beam deposition apparatus so as to clarify the effect of these doping elements on the thermoelectric properties and electric conductivity of β-FeSi 2. Substitution of Ru for Fe in β-FeSi 2 up to approximately 7 at.% of Ru seemed to be possible from the X-ray diffraction pattern. On the other hand, substitution of Ge for Si as small as 1.4 at.% Ge brought about the segregation. This feature was also clearly observed in scanning electron micrographs. Therefore, Ru could be successfully doped in β-FeSi 2, however, Ge could not. Though the Seebeck coefficient of β-FeSi 2 has been slightly decreased by doping of Ru, its electric conductivity has been increased by one order of magnitude.

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