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Influence of oxygen on polycrystalline silicon crystal for solar cells

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
99
Identifiers
DOI: 10.1016/s0022-0248(08)80131-5

Abstract

The influence of oxygen on the characteristics of polycrystalline silicon sheets for solar cells, produced by the spin cast method, has been investigated. It was confirmed that if the oxygen concentration was more than 7.5 X 10 17 atoms/cm 3 after the cell fabrication process, the resistivity of the crystal became higher than before cell fabrication process. To obtain solar cells which have an energy conversion efficiency of more than 10%, the oxygen content should be less than 7.5 X 10 17 atoms/cm 3

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