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Influence on the electrical characteristics of the -NH radicals incorporated into PECVD silicon nitride films

Authors
Journal
Vacuum
0042-207X
Publisher
Elsevier
Publication Date
Volume
39
Identifiers
DOI: 10.1016/0042-207x(89)90025-0
Disciplines
  • Chemistry
  • Engineering

Abstract

Abstract The electrical and structural properties of silicon nitride films deposited by plasma-enhanced chemical vapour deposition (PECVD) have been investigated. The films were grown using ammonia and silane diluted in nitrogen (2%) as reactants in a wide range of ammonia to silane flow ratios (between 3 and 35) and plasma powers (10–500 W). Only -NH species were found incorporated into the films. For the stoichiometric samples, a good correlation between the NH bond density and the positive charge density was observed.

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