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Formation of TiN layers by plasma-assisted chemical vapour deposition at temperatures greater than 823 K

Authors
Journal
Materials Science and Engineering A
0921-5093
Publisher
Elsevier
Publication Date
Volume
140
Identifiers
DOI: 10.1016/0921-5093(91)90469-4
Disciplines
  • Chemistry

Abstract

Abstract The paper presents the first results of studies on the deposition of TiN layers in various regions of a d.c. glow discharge, namely on the cathode, on substrates isolated from the cathode and anode (the substrates being at the plasma potential) and on the anode. The results obtained have revealed differences in the growth kinetics and surface morphology of the TiN layers, depending on the region where the deposition process proceeded. The aim of the studies was to examine the role that a low temperature plasma plays in plasma-assisted chemical vapour deposition (PACVD) processes and to verify the possibility of employing a.c. current activation treatment. The processes were carried out in a hot anode PACVD apparatus.

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