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Current gain of high-low junction emitter bipolar transistor structure with uniformly doped profiles

Authors
Journal
Solid-State Electronics
0038-1101
Publisher
Elsevier
Publication Date
Volume
23
Issue
12
Identifiers
DOI: 10.1016/0038-1101(80)90115-x
Disciplines
  • Design

Abstract

Abstract The analytic expressions for the maximum current gain and the transit times across the neutral emitter and base region in the case of uniformly doped high-low junction emitter bipolar transistor structure are calculated in detail, which include the effects of energy-gap narrowing in highly doped semiconductor, doping-dependent minority-carrier diffusivities, contact-surface and bulk recombinations. It is shown that the high-low junction emitter with the doping in the low-concentration emitter higher than that of the base region will give higher maximum current gain and better frequency response than those of the LEC structure originally proposed by Yagi et al. Numerical results for the optimal design of the high-low junction emitter are given and discussed.

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