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Chemical driving force for diffusion-induced recrystallization or diffusion-induced grain boundary migration in a binary system consisting of nonvolatile elements

Authors
Journal
Scripta Materialia
1359-6462
Publisher
Elsevier
Publication Date
Volume
54
Issue
10
Identifiers
DOI: 10.1016/j.scriptamat.2006.01.035
Keywords
  • Diffusion Bonding
  • Electron Probe Microanalysis
  • Conductor
  • Grain Boundary Diffusion
  • Modelling
Disciplines
  • Chemistry

Abstract

Abstract A new model has been proposed to evaluate the chemical driving force for diffusion-induced recrystallization (DIR) or diffusion-induced grain boundary migration in the A(B) system, where elements A and B are nonvolatile at solid-state reaction temperatures. The experimental results for DIR in the Ag(Sn) and Cu(Ni) systems in previous studies have been numerically analyzed using the new model. The analyses indicate that a region with discontinuously different composition is formed by DIR in the early stages of the reaction with the maximum driving force.

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