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Ellipsometry as a powerful tool for the control of epitaxial semiconductor structures in-situ and ex-situ

Authors
Journal
Materials Science and Engineering B
0921-5107
Publisher
Elsevier
Publication Date
Volume
44
Identifiers
DOI: 10.1016/s0921-5107(96)01741-2
Keywords
  • Ellipsometry
  • Semiconductor Structures
  • Thin Films

Abstract

Abstract The results of the consistent use of in-situ and ex-situ ellipsometry as a control of MCT/CdTe/GaAs heterostructures growth by molecular beam epitaxy (MBE) are presented. It is shown that ellipsometry is able to control the quality of a GaAs substrate preparation prior to epitaxy, to measure the buffer layers and MCT films growth rate, to monitor in-situ composition and surface morphology during deposition process. Temperature measurements of CdTe dielectric functions were made which show the possibility of in-situ determination of surface temperature.

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