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Layer-by-layer growth of Bi2Sr2Can-1CunOxfilms withn≥3 by molecular beam epitaxy

Physica C Superconductivity
Publication Date
DOI: 10.1016/0921-4534(94)91579-2


Abstract Thin films of Bi 2Sr 2Ca n-1Cu nO x were grown using a layer-by-layer molecular beam epitaxy technique. The results demonstrate that nearly single-phase highly metastable films with n=4 to 11 can be synthesized both on SrTiO 3 and MgO substrates and their physical properties studied. X-ray diffraction data of the films with n=8,9, 10 and 11 are presented. The observed Laue oscillations indicate that the films exhibit high crystal quality and nearly perfect surfaces and interfaces. Resistivity measurements show semimetal-semiconductor transitions to occur at temperatures below 100 K, a result of insufficient doping by holes in the CuO 2 planes as n increases.

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