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On the temperature dependence of subthreshold currents in MOS electron inversion layers

Authors
Journal
Solid-State Electronics
0038-1101
Publisher
Elsevier
Publication Date
Volume
22
Issue
5
Identifiers
DOI: 10.1016/0038-1101(79)90150-3

Abstract

Abstract It has been observed that the “ n” factor which enters into the exponential dependence of drain current on gate voltage for MOS transistors operating in the weak inversion region, exhibits a significant temperature dependence. This effect is correlated with the increase of interface state density towards the band edges and the variation of the space-charge capacitance.

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