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Control of boron diffusion in polysilicon for constructing overlapping polysilicon gate charge-coupled devices

Authors
Journal
Microelectronics Reliability
0026-2714
Publisher
Elsevier
Publication Date
Volume
23
Issue
1
Identifiers
DOI: 10.1016/0026-2714(83)91387-2

Abstract

Abstract The diffusion coefficient of boron having values significantly different in silicon and silicon dioxide has been used to control the doping of boron impurity in intrinsic polysilicon deposited over the gate oxide. The method reduces the possibility of doping gate oxide while diffusing boron in polysilicon. Using the method, silicon gate p-MOSFETS and twenty bit photo-sensor, four phase, double overlapping polysilicon gate surface channel charge-coupled devices have been constructed with a transfer efficiency of 0.9990. The measured values of the threshold voltage of MOSFETS are in close agreement with their corresponding calculated values.

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