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Development of SiNxand AlNxpassivation layers

Thin Solid Films
Publication Date
DOI: 10.1016/s0040-6090(99)00702-6
  • Aluminum Nitride
  • Deposition Process
  • Silicon Nitride
  • Structural Properties


Abstract SiN x and AlN x films were both DC- and RF-magnetron reactively sputtered at various deposition powers and total bleeding pressures as a function of flow rate ratio of Ar to N 2( F= f Ar/ fN 2). The microstructure of the SiN x films is amorphous. A low F results in a smooth and featureless morphology in the RF-magnetron sputtered SiN x films. However, microvoids are present in these films when F is increased. DC-magnetron sputtered SiN x films produce a porous structure as well as a rough surface at a low F, but the porosity of the films appears to be decreased with increasing F. On the other hand, AlN x films consist of small and randomly oriented hcp crystals. In the RF-magnetron sputtered AlN x films, the density of microvoids is high at a low F but is decreased with an increase of F and the deposition rate. In contrast, the density of microvoids is increased with increasing F and the deposition power for the DC-magnetron sputtered AlN x films.

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