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Orientation and growth behavior of CaHfO3thin films on non-oxide substrates

Authors
Journal
Materials Letters
0167-577X
Publisher
Elsevier
Publication Date
Volume
61
Issue
16
Identifiers
DOI: 10.1016/j.matlet.2006.11.092
Disciplines
  • Mathematics

Abstract

Abstract The growth behavior of CaHfO 3 on (001) Ni and Ge substrates was examined. CaHfO 3 is a perovskite insulator that is suitable for applications as a buffer layer or gate dielectric. The tendency for CaHfO 3 growth on both (001) Ni and (001) Ge substrates is to orient with the CaHfO 3 (200) + (121) planes parallel to the surface, which corresponds to the (110) orientation in the pseudo-cubic geometry. This differs from that of CaHfO 3 on perovskites, such as (001) LaAlO 3, where a pseudo-cube-on-cube orientation is observed.

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