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On the sensitivity to temperature of the threshold current in a strained quantum-well semiconductor laser under a magnetic field

Authors
Journal
Optik - International Journal for Light and Electron Optics
0030-4026
Publisher
Elsevier
Publication Date
Volume
122
Issue
7
Identifiers
DOI: 10.1016/j.ijleo.2010.03.022
Keywords
  • Strained Quantum-Well Laser
  • Sensitivity
  • Temperature
  • Magnetic Field
Disciplines
  • Physics

Abstract

Abstract The sensitivity to temperature of the threshold current in a strained quantum-well semiconductor laser under a perpendicular magnetic field is determined quantitatively by means of a suitable merit parameter. The values taken on by this parameter are discussed in terms of changes in the temperature and in the magnetic-field strength.

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