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Highly selective diamond and β-SiC crystal formation at increased atomic hydrogen concentration: A route for synthesis of high-quality and patterned hybrid diamond/β-SiC composite film

Authors
Journal
Scripta Materialia
1359-6462
Publisher
Elsevier
Publication Date
Volume
65
Issue
6
Identifiers
DOI: 10.1016/j.scriptamat.2011.06.023
Keywords
  • Chemical Vapour Deposition
  • Diamond
  • Composite Films
  • Growth Mechanism
Disciplines
  • Chemistry

Abstract

Utilizing a high atomic hydrogen concentration, highly selective formation of micrometer-sized diamond and β-SiC crystals is achieved in a microwave plasma chemical vapour deposition process. The high atomic hydrogen concentration, generated by a high microwave power density, hinders secondary heterogeneous nucleation and therefore enhances the selectivity of CH 3 and SiH 3 deposition onto diamond and β-SiC crystals, respectively. Based on experimental observation, an H-induced selective growth model is proposed that explains the mechanisms.

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