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Selector-less RRAM with non-linearity of device for cross-point array applications

Authors
Journal
Microelectronic Engineering
0167-9317
Publisher
Elsevier
Volume
109
Identifiers
DOI: 10.1016/j.mee.2013.03.130
Keywords
  • Rram
  • Cross-Point Array
  • Selector

Abstract

Abstract We achieved resistive switching characteristics with non-linearity for selector-less RRAM. The non-linear characteristic was obtained by controlling operation currents. The observed non-linearity in the low resistance state (LRS) can be explained by thermally-formed suboxide region under higher operation currents. By using the non-linear characteristic, the RRAM device as one-resistor memory cell with TiOx/TiOy bi-layer structure is applicable to cross-point array without additional selector device for the suppression of sneak-path currents.

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