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Transport phenomena in germanium and silicon

Authors
Journal
Journal of Physics and Chemistry of Solids
0022-3697
Publisher
Elsevier
Publication Date
Volume
23
Identifiers
DOI: 10.1016/0022-3697(62)90051-3
Disciplines
  • Musicology
  • Physics

Abstract

Abstract A variational principle for interband scattering and general energy surfaces is derived, which enables one to obtain the various transport quantities in terms of infinite determinants. The matrix elements are calculated for warped energy surfaces, such as occur in germanium and silicon, using the appropriate transition probabilities derived by Ehrenreich and Overhauser. The general results are applied to the evaluation of the transport quantities for acoustical and optical scattering. In particular, it is found that in that approximation the temperature dependence of the mobility of germanium is given by T −2.5, which compares well with the experimental results which lead to a T −2.3 dependence, in contrast to the standard theory predicting a temperature dependence of the form T −1.5.

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