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Edge of the two-dimensional electron gas in a gated heterostructure

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/0039-6028(96)00459-1
Keywords
  • Electrical Transport
  • Electron Density
  • Excitation Spectra Calculations
  • Gallium Arsenide
  • Heterojunctions
  • Low Index Single Crystal Surfaces
  • Semiconductor-Semiconductor Heterostructures
  • Surface Electronic Phenomena
Disciplines
  • Physics

Abstract

Abstract We describe a quantitative electrostatic theory of a two-dimensional electron gas (2DEG) confined by a semi-infinite gate. It includes the finite depth of the 2DEG below the surface of the heterostructure, which enables us to treat the whole range of gate voltages. Two models are used for the boundary condition on the free surface, with either pinned potential or frozen charge. Our results predict the position and width of the strips of incompressible liquid in the quantum Hall regime, and are in good agreement with recent experiments.

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