Electron beam annealing has, after an active period of research, become an established technology in the production of semiconductor devices, since high quality restoration practically without out-diffusion, can be achieved. Many universities and research institutions cannot afford to purchase a dedicated electron beam annealing apparatus. In the following a conversion of an industrial electron beam welding apparatus into an annealing apparatus with line focus is described, which could easily be copied by interested institutions. A magnetic quadropole-lens is described generator circuit for the X and Y deflection are used. Electron currents of 4 to 5 mA cause silicon to melt (1415°C). Annealing results obtained with the apparatus are discussed.