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Growth and post-annealing effect on the properties of the new sulfosalt SnSb2S4thin films

Elsevier B.V.
Publication Date
DOI: 10.1016/j.physe.2011.07.007


Abstract In this work, the effect of the thermal annealing atmosphere on the structural, optical and electrical properties of the sulfosalt SnSb 2S 4 films obtained by thermal vacuum evaporation was studied. The samples are annealed at different atmospheres in the temperature range 50−275 °C for 1 h. It is observed that SnSb 2S 4 films exhibit a dramatic change in their electrical properties at transition temperatures of about 150 °C, 170 °C and 200 °C after an annealing process under air, nitrogen and vacuum atmospheres, respectively. The electrical resistivity measurements suggest that obtained films show ‘semiconducting’ behavior with resistivities between 10 and 100 Ω cm; the annealed films present rather lower resistivities between 10 −2 and 10 −3 Ω cm and exhibit obvious p +-type semiconductor behavior with a dominant crystalline component.

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