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Improved device performance based on crosslinking of poly (3-hexylthiophene)

Authors
Journal
Synthetic Metals
0379-6779
Publisher
Elsevier
Publication Date
Volume
160
Identifiers
DOI: 10.1016/j.synthmet.2010.07.023
Keywords
  • Poly (3-Hexylthiophene)
  • Crosslinkers
  • Bisazides
  • Diode Devices

Abstract

Abstract Diode devices (glass/ITO/polymer/Al) have been fabricated using poly (3-hexylthiophene) (P3HT) crosslinked with two different biaryl crosslinkers. Crosslinking was performed by exposing the thin films with different wt% of crosslinker to UV irradiation and progress of crosslinking was monitored by IR spectroscopy. An increase in hole mobility of two orders of magnitude has been observed after crosslinking.

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