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Studies of the substitutional site of Co2+in AgGaS2crystal from EPR data

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
109
Issue
2
Identifiers
DOI: 10.1016/s0038-1098(98)00529-8
Keywords
  • A. Semiconductors
  • C. Impurities In Semiconductors
  • D. Crystal And Ligands Fields
  • E. Electron Paramagnetic Resonance

Abstract

Abstract The EPR zero-field splitting D and g factors g ∥, Δ g (= g ∥− g ⊤) for Co 2+ ions at Ag + and Ga 3+ sites of surphur-annealed AgGaS 2 crystal were calculated from the high-order perturbation formulas based on the two spin–orbit coupling parameter model. The calculated results show that Co 2+ replace Ag + site in the AgGaS 2 crystal. This point is contrary to that obtained from the absorption spectrum and Raman spectroscopy studies for Co 2+ in as-grown AgGaS 2 crystal. It appears that Co 2+ can replace Ag + or Ga 3+ site in AgGaS 2 ternary semiconductor, depending on the technology of material preparation.

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